參數資料
型號: MT47H128M8HV-187ELIT:E
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.35 ns, PBGA60
封裝: 8 X 11.50 MM, FBGA-60
文件頁數: 61/133頁
文件大小: 9170K
Table 11: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
VDDQ = +1.8V ±0.1V, VDD = +1.8V ±0.1V
AC Characteristics
-187E
-25E
-25
-3E
-3
-37E
-5E
Units Notes
Parameter
Symbol
Min
Max
Min Max Min Max Min Max Min Max Min Max Min Max
Data
Strobe-In
DQS rising edge to
CK rising edge
tDQSS
MIN = –0.25 × tCK
MAX = +0.25 × tCK
tCK
DQS input-high
pulse width
tDQSH
MIN = 0.35 × tCK
MAX = n/a
tCK
DQS input-low
pulse width
tDQSL
MIN = 0.35 × tCK
MAX = n/a
tCK
DQS falling to CK
rising: setup time
tDSS
MIN = 0.2 × tCK
MAX = n/a
tCK
DQS falling from
CK rising:
hold time
tDSH
MIN = 0.2 × tCK
MAX = n/a
tCK
Write preamble
setup time
tWPRES
MIN = 0
MAX = n/a
ps
DQS write
preamble
tWPRE
MIN = 0.35 × tCK
MAX = n/a
tCK
DQS write
postamble
tWPST
MIN = 0.4 × tCK
MAX = 0.6 × tCK
tCK
WRITE command
to first DQS
transition
MIN = WL - tDQSS
MAX = WL + tDQSS
tCK
1Gb:
x4,
x8,
x16
DDR2
SDRAM
AC
Timing
Operating
Specifications
PDF:
09005aef821ae8bf
1GbDDR2.pdf
Rev.
S
10/09
EN
33
Micron
Technology,
Inc.
reserves
the
right
to
change
products
or
specifications
without
notice.
2004
Micron
Technology,
Inc.
All
rights
reserved.
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