
Products and specifications discussed herein are subject to change by Micron without notice.
128Mb: x4, x8, x16 SDRAM
Features
PDF: 09005aef8091e66d/Source: 09005aef8091e625
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MSDRAM_1.fm - Rev. N 1/09 EN
1
1999 Micron Technology, Inc. All rights reserved.
SDRAM
MT48LC32M4A2 – 8 Meg x 4 x 4 banks
MT48LC16M8A2 – 4 Meg x 8 x 4 banks
MT48LC8M16A2 – 2 Meg x 16 x 4 banks
Features
PC100- and PC133-compliant
Fully synchronous; all signals registered on positive edge
of system clock
Internal pipelined operation; column address can be
changed every clock cycle
Internal banks for hiding row access/precharge
Programmable burst lengths (BL): 1, 2, 4, 8, or full page
Auto precharge, includes concurrent auto precharge, and
auto refresh modes
Self refresh mode; standard and low power
64ms, 4,096-cycle refresh (commercial & industrial)
16ms, 4,096-cycle refresh (Automotive)
LVTTL-compatible inputs and outputs
Single +3.3 ±0.3V power supply
Options
Designator
Configurations
Write recovery (tWR)
Package/Pinout
Timing (cycle time)
Self refresh
Design revision
Operating temperature range
None
Notes:
1. Refer to Micron technical note: TN-48-05.
2. Off-center parting line.
3. Consult Micron for availability.
4. x16 only.
– 32 Meg x 4 (8 Meg x 4 x 4 banks)
32M4
– 16 Meg x 8 (4 Meg x 8 x 4 banks)
16M8
– 8 Meg x 16 (2 Meg x 16 x 4 banks)
8M16
A2
– Plastic package – OC
PL2 – 54-pin TSOP II (400 mil)
TG
– 54-pin TSOP II (400 mil) Pb-free
P
– 60-ball FBGA (8mm x 16mm)
– 60-ball FBGA (8mm x 16mm) Pb-free
– 54-ball VFBGA (8mm x 8mm)
– 54-ball VFBGA (8mm x 8mm) Pb-free
– 7.5ns @ CL = 3 (PC133)
-75
– 7.5ns @ CL = 2 (PC133)
-7E
– 6.0ns @ CL = 3 (x16 only)
-6A
– Standard
None
– Low power
L
:G
– Commercial (0°C to +70°C)
– Industrial (–40°C to +85°C)
– Automotive (–40°C to +105°C)
Figure 1:
54-Pin TSOP Pin Assignment
(Top View)
Notes:
1. The # symbol indicates signal is active LOW. A dash (-) indicates
x8 and x4 pin function is same as x16 pin function.
Table 1:
Address Table
32 Meg x 4
16 Meg x 8
8 Meg x 16
Configuration
8 Meg x 4 x 4
banks
4 Meg x 8 x 4
banks
2 Meg x 16 x 4
banks
Refresh count
4K
Row addressing
4K (A0–A11)
Bank addressing
4 (BA0, BA1)
Column addressing
2K (A0–A9,
A11)
1K (A0–A9)
512 (A0–A8)
Table 2:
Key Timing Parameters
CL = CAS (Read) latency
Speed
Grade
Clock
Frequency
Access Time
Setup
Time
Hold
Time
CL = 2
CL = 3
-6A
167 MHz
–
5.4ns
1.5ns
0.8ns
-7E
143 MHz
–
5.4ns
1.5ns
0.8ns
-7E
133 MHz
5.4ns
–
1.5ns
0.8ns
-75
133 MHz
–
5.4ns
1.5ns
0.8ns
-75
100 MHz
6ns
–
1.5ns
0.8ns
VDD
DQ0
VDDQ
DQ1
DQ2
VssQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VssQ
DQ7
VDD
DQML
WE#
CAS#
RAS#
CS#
BA0
BA1
A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
Vss
DQ15
VssQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VssQ
DQ10
DQ9
VDDQ
DQ8
Vss
NC
DQMH
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
Vss
x8
x16
x8
x4
-
DQ0
-
NC
DQ1
-
NC
DQ2
-
NC
DQ3
-
NC
-
NC
-
NC
-
NC
DQ0
-
NC
-
NC
DQ1
-
NC
-
NC
-
DQ7
-
NC
DQ6
-
NC
DQ5
-
NC
DQ4
-
NC
-
DQM
-
NC
-
NC
DQ3
-
NC
-
NC
DQ2
-
NC
-
DQM
-