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| 型號： | MT46V4M16 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4組，雙數(shù)據(jù)速率同步動態(tài)RAM) |
| 中文描述： | 1梅格× 16 × 4銀行DDR SDRAM內存（100萬× 16 × 4組，雙數(shù)據(jù)速率同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 39/69頁 |
| 文件大?。?/td> | 2369K |
| 代理商： | MT46V4M16 |
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39
64Mb: x4, x8, x16 DDR SDRAM
64Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb: x4, x8, x16
DDR SDRAM
TRUTH TABLE 3 – CURRENT STATE BANK
n
– COMMAND TO BANK
n
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE CS# RA S#CA S# WE#
Any
H
L
L
Idle
L
L
L
Row Active
L
L
Read
L
(Auto-
L
Precharge
L
Disabled)
L
Write
L
(Auto-
L
Precharge
L
Disabled)
COMMA ND/A CTION
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
ACTIVE (select and activate row)
AUTO REFRESH
LOAD MODE REGISTER
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (truncate READ burst, start PRECHARGE)
BURST TERMINATE
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE (truncate WRITE burst, start PRECHARGE)
NOTES
X
H
L
L
L
H
H
L
H
H
L
H
H
H
L
X
H
H
L
L
L
L
H
L
L
H
H
L
L
H
X
H
H
H
L
H
L
L
H
L
L
L
H
L
L
7
7
10
10
8
10
10, 12
8
9
10, 11
10
8, 11
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSNR has been met (if the previous
state was self refresh).
2. This table is bank-specific, except where noted (i.e., the current state is for a specific bank and the commands shown are those
allowed to be issued to that bank when in that state). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and
t
RP has been met.
Row Active: A row in the bank has been activated, and
t
RCD has been met. No data bursts/accesses
and no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands,
or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable
commands to the other bank are determined by its current state and Truth Table 3, and according to Truth Table 4.
Precharging: Starts with registration of a PRECHARGE command and ends when
t
RP is met. Once
t
RP is
met, the bank will be in the idle state.
Row Activating: Starts with registration of an ACTIVE command and ends when
t
RCD is met.
Once
t
RCD is met, the bank will be in the
“
row active
”
state.
Read w/Auto-
Precharge Enabled: Starts with registration of a READ command with auto precharge enabled and ends
when
t
RP has been met. Once
t
RP is met, the bank will be in the idle state.
Write w/Auto-
Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and ends
when
t
RP has been met. Once
t
RP is met, the bank will be in the idle state.
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相關代理商/技術參數(shù) |
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| MT46V4M32 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
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| MT46V64M16 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE (DDR) SDRAM |
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