參數(shù)資料
型號(hào)： MT46V16M4
廠商： Micron Technology, Inc.
英文描述： 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4組，雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)
中文描述： 4梅格× 4 × 4銀行DDR SDRAM內(nèi)存（四米× 4 × 4組，雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM）的
文件頁數(shù)： 34/69頁
文件大?。?/td> 2369K
代理商： MT46V16M4
34
64Mb: x4, x8, x16 DDR SDRAM
64Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb: x4, x8, x16
DDR SDRAM
Figure 22
WRITE to PRECHARGE – Uninterrupting
t
DQSS (NOM)
CK
CK#
COMMAND
WRITE
NOP
NOP
NOP
PRE
7
NOP
ADDRESS
Bank
a
,
Col
b
Bank,
(
a
or
all
)
NOP
T0
T1
T2
T3
T2n
T4
T5
NOTE
: 1. DI
b
= data-in for column
b
.
2. Three subsequent elements of data-in are applied in the programmed order following DI
b
.
3. An uninterrupted burst of 4 is shown.
4.tWR is referenced from the first positive CK edge after the last data-in pair.
5. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE and WRITE commands may
be to different devices, in which case tWR is not required and the PRECHARGE command could be applied earlier.
6. A10 is LOW with the WRITE command (auto precharge is disabled).
7. PRE = PRECHARGE command.
T1n
T6
t
WR
t
RP
DQ
DQS
DM
DI
b
t
DQSS (MIN)
DQ
DQS
DM
DI
b
t
DQSS (MAX)
DQ
DQS
DM
DI
b
DON
’
T CARE
TRANSITIONING DATA
t
DQSS
t
DQSS
t
DQSS
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT46V16M8 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
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