參數(shù)資料
型號: MRF9030LR1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-360, CASE 360B-05, 2 PIN
文件頁數(shù): 5/12頁
文件大小: 549K
代理商: MRF9030LR1
5
MRF9030LR1 MRF9030LSR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
960
12
20
930
38
50
IRL
G
ps
η
IMD
V
DD
= 26 Vdc
P
out
= 30 W (PEP)
I
DQ
= 250 mA
TwoTone, 100 kHz Tone Spac
ing
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
Gp
I
I
,
η
19
45
18
40
17
35
16
30
15
32
14
34
13
36
955
950
945
940
935
18
10
12
14
16
I
I
100
17
20
1
I
DQ
= 375 mA
300 mA
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Gp
19.5
19
18.5
18
17.5
10
250 mA
200 mA
100
60
50
1
I
DQ
= 200 mA
300 mA
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
I
I
20
30
40
10
375 mA
250 mA
100
70
0
1
3rd Order
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
I
I
10
10
20
30
40
50
60
5th Order
7th Order
100
10
22
0.1
0
60
G
ps
η
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 945 MHz
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
Gp
,
η
20
50
18
40
16
30
14
20
12
10
10
1
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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