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參數(shù)資料
| 型號： | MRF9030MR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封裝： | PLASTIC, TO-270, CASE 1265-08, 2 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 455K |
| 代理商： | MRF9030MR1 |
1
MRF9030MR1 MRF9030MBR1
Motorola, Inc. 2002
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — –31 dBc
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Moisture Sensitivity Level 3
Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
+15, –0.5
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
139
0.93
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
175
°
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9030MR1
MRF9030MBR1
C7 (Minimum)
C6 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.08
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9030M/D
SEMICONDUCTOR TECHNICAL DATA
945 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1337–01, STYLE 1
(TO–272 DUAL LEAD)
PLASTIC
(MRF9030MBR1)
CASE 1265–07, STYLE 1
(TO–270)
PLASTIC
(MRF9030MR1)
REV 3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9030MR1_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9030NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9030NR1 | 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET TO-270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9030NR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9030R1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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