參數(shù)資料
型號: MRF6VP2600HR6
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN
文件頁數(shù): 14/19頁
文件大小: 1438K
代理商: MRF6VP2600HR6
4
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
Figure 3. MRF6VP2600HR6 Test Circuit Component Layout
--
+
MRF6VP2600H
CUT
OUT
A
REA
Rev. 3
C16
* L4 is wrapped around R1.
B1
C13
C12
C11
C9
C8
C7
C14
C15
L3
C6
C10
L2
T1
J1
C1
L1
C2
C3 (on side)
J2
T2
C4
C5
C19
C17
C18
C20
C21
C22
L4, R1*
C23
C24
C25
225 MHz
相關(guān)PDF資料
PDF描述
MRF6VP3091NR1 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6VP3091NBR1 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6VP3091NR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6VP3450HR5 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6VP3450HR6 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6VP2600HR6_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP3091N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
MRF6VP3091NBR1 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP3091NBR5 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP3091NR1 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray