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參數(shù)資料
| 型號： | MRF6VP2600HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 12/19頁 |
| 文件大?。?/td> | 1438K |
| 代理商： | MRF6VP2600HR6 |
2
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
10
μAdc
Drain--Source Breakdown Voltage
(ID = 150 mA, VGS =0 Vdc)
V(BR)DSS
110
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
50
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
2.5
mA
On Characteristics
Gate Threshold Voltage (1)
(VDS =10 Vdc, ID = 800 μAdc)
VGS(th)
1
1.65
3
Vdc
Gate Quiescent Voltage (2)
(VDD =50 Vdc, ID = 2600 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.7
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS =10 Vdc, ID =2 Adc)
VDS(on)
—
0.25
—
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
1.7
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
101
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
287
—
pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg., f = 225 MHz, DVB--T
OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4MHz Offset.
Power Gain
Gps
24
25
27
dB
Drain Efficiency
ηD
27
28.5
—
%
Adjacent Channel Power Ratio
ACPR
—
--61
--59
dBc
Input Return Loss
IRL
—
--18
--9
dB
Typical Performance — 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 600 W CW
Power Gain
Gps
—
22
—
dB
Drain Efficiency
ηD
—
68
—
%
Input Return Loss
IRL
—
--15
—
dB
Typical Performance — 88--108 MHz (In Freescale 88--108 MHz Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 600 W
CW
Power Gain
Gps
—
24.5
—
dB
Drain Efficiency
ηD
—
74
—
%
Input Return Loss
IRL
—
--5
—
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
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| MRF6VP3091N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs |
| MRF6VP3091NBR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3091NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3091NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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