- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98040 > MRF6VP2600HR6 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF6VP2600HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 10/19頁 |
| 文件大?。?/td> | 1438K |
| 代理商： | MRF6VP2600HR6 |
18
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2008
Initial Release of Data Sheet
1
July 2008
Removed Capable of Handling 5:1 VSWR bullet, p. 1
Corrected Zsource and Zload values from 1.58 + j6.47 to 1.42 + j8.09 and 4.60 + j1.85 to 4.45 + j1.16 and re-
plotted data in Fig. 21, Series Equivalent Source and Load Impedance, p. 9
2
Sept. 2008 Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to de-
note that each side of device is measured separately, p. 5
Updated Fig. 5, DC Safe Operating Area, to show one side of the device, p. 5
Figs. 21 and 27, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration”, p. 9, 14
2.1
Nov. 2008
Corrected Figs. 21 and 27 Revision History Zload copy to read ”Test circuit impedance as measured from
drain to drain, balanced configuration”, p. 9, 14
4
May 2009
Updated bullets in Features section to reflect consistent listing across products, p. 1
Added thermal data for 352.2 MHz application to Table 2, Thermal Characteristics, p. 1
Added Typical Performances table for 352.2 MHz application, p. 2
Added Fig. 28, Test Circuit Component Layout -- 352.2 MHz and Table 7, Test Circuit Component Designations
and Values -- 352.2 MHz, p. 15
Added Fig. 29, CW Power Gain and Drain Efficiency versus Output Power -- 352.2 MHz p. 16
Added Fig. 30, Series Equivalent Source and Load Impedance -- 352.2 MHz, p. 17
4.1
June 2009
Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, Table 5, Test Circuit
Component Designations and Values and Table 6, Test Circuit Component Designations and Values —
88--108 MHz, p. 3, 11
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 20
5
May 2010
Changed 10--500 MHz to 2--500 MHz in Device Description box, p. 1
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Added thermal data for 88--108 MHz application to Thermal Characteristics table, p. 1
Added Typical Performance table for 88--108 MHz application, p. 2
Removed Fig. 20, MTTF versus Junction Temperature -- Pulsed and renumbered accordingly, p. 8
Replaced Fig. 22 Test Circuit Component Layout, Table 6. Test Circuit Component Designations and Values,
the Typical Characteristic curves and Fig. 27 Series Impedance for 88--108 MHz with improved circuit
performance figures. The 88--108 MHz application circuit is also now a more compact size., p. 10--12
5.1
July 2010
Fig. 24, Series Impedance for 88--108 MHz, table and plot updated to reflect correct location of Zsource and
Zload,p.12
相關PDF資料 |
PDF描述 |
|---|---|
| MRF6VP3091NR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6VP3091NBR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6VP3091NR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6VP3450HR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3450HR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6VP2600HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP3091N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs |
| MRF6VP3091NBR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3091NBR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6VP3091NR1 | 功能描述:射頻MOSFET電源晶體管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。