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參數(shù)資料
| 型號： | MRF19090R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 333K |
| 代理商： | MRF19090R3 |
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MRF19090R3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for Class AB PCN and PCS base station applications with
frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
Typical CDMA Performance: 1990 MHz, 26 Volts
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9 Watts Avg.
Power Gain — 10 dB
Adjacent Channel Power —
885 kHz: -47 dBc @ 30 kHz BW
1.25 MHz: -55 dBc @ 12.5 kHz BW
2.25 MHz: -55 dBc @ 1 MHz BW
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
270
1.54
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.65
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF19090
Rev. 7, 10/2008
Freescale Semiconductor
Technical Data
MRF19090R3
1930 -1990 MHz, 90 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 465B-03, STYLE 1
NI-880
Freescale Semiconductor, Inc., 2008. All rights reserved.
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