參數(shù)資料
型號(hào)： MRF19120
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-1230, CASE 375D-04, 4 PIN
文件頁數(shù)： 1/8頁
文件大小： 329K
代理商： MRF19120
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Fr
eescale
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Freescale Semiconductor, Inc.
MRF19120
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
The RF MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
CDMA Performance @ 1990 MHz, 26 Volts
IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — -47 dBc @ 30 kHz BW
1.25 MHz — -55 dBc @ 12.5 kHz BW
2.25 MHz — -55 dBc @ 1 MHz BW
Output Power — 15 Watts (Avg.)
Power Gain — 11.7 dB
Efficiency — 16%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency, High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW)
Output Power
S-Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
389
2.22
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.45
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF19120/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF19120
1990 MHz, 120 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-04, STYLE 1
NI-1230
Motorola, Inc. 2004
REV 8
For More Information On This Product,
Go to: www.freescale.com
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