參數(shù)資料
型號(hào)： MRF20030R
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CASE 395C-01, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 90K
代理商： MRF20030R
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INFORMA
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1
MRF20030R
MOTOROLA RF DEVICE DATA
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistor
Designed for broadband commercial and industrial applications at frequen-
cies from 1800 to 2000 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common–emitter class AB amplifier
applications. Suitable for frequency modulated, amplitude modulated and
multi–carrier base station RF power amplifiers.
Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
Output Power — 30 Watts (PEP)
Power Gain — 9.8 dB
Efficiency — 34%
Intermodulation Distortion — –28 dBc
Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power — 30 Watts
Power Gain — 11 dB
Efficiency — 40%
Intermodulation Distortion — –30 dBc
Excellent Thermal Stability
Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)
Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Designed for FM, TDMA, CDMA, and Multi–Carrier Applications
Note: Not suitable for class A operation.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
25
Vdc
Collector–Emitter Voltage
VCES
60
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Collector–Emitter Voltage (RBE = 100 )
VCER
30
Vdc
Emitter–Base Voltage
VEB
–3
Vdc
Collector Current – Continuous
IC
4
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
125
0.71
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
RθJC
1.4
°C/W
(1) Thermal resistance is determined under specified RF operating condition.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
25
28
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
60
70
—
Vdc
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V(BR)CBO
60
70
—
Vdc
Order this document
by MRF20030R/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF20030R
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
CASE 395C–01, STYLE 1
Motorola, Inc. 1999
(Replaces MRF20030/D)
REV 1
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