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參數(shù)資料
| 型號： | MRF21010S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360C-05, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 183K |
| 代理商： | MRF21010S |
MRF21010 MRF21010S
5.2–284
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
Typical W–CDMA Performance: –45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,
10 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
+15, – 0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
43.75
0.25
W
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
5.5
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2170 MHz, 10 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
(NI–360)
(MRF21010)
MRF21010
MRF21010S
CASE 360C–05, STYLE 1
(NI–360S)
(MRF21010S)
REV 3
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