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參數(shù)資料
| 型號： | MRF21060R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 357K |
| 代理商： | MRF21060R3 |
5-508
Freescale Semiconductor
Wireless RF Product Device Data
MRF21060R3 MRF21060SR3
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and
multicarrier amplifier applications.
Typical W-CDMA Performance: 2140 MHz, 28 Volts
5 MHz Offset @ 4.096 MHz BW, 15 DTCH
Output Power — 6.0 Watts
Power Gain — 12.5 dB
Drain Efficiency — 15%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 60 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
180
0.98
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.02
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 7, 12/2004
Freescale Semiconductor
Technical Data
MRF21060R3
MRF21060SR3
2170 MHz, 60 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF21060R3
CASE 465A-06, STYLE 1
NI-780S
MRF21060SR3
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PDF描述 |
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| MRF21085R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRF21085LS | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21090R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21060S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21060SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21085 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21085LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21085LS | 制造商:Motorola Inc 功能描述: |
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