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參數(shù)資料
| 型號： | MRF21060R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 357K |
| 代理商： | MRF21060R3 |
5-512
Freescale Semiconductor
Wireless RF Product Device Data
MRF21060R3 MRF21060SR3
TYPICAL CHARACTERISTICS
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
ADJACENT
CHANNEL
POWER
RA
TIO
(dB)
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
5
0
2120
15
Figure 4. W-CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
10
Pout, OUTPUT POWER (WATTS Avg.) WCDMA
45
20
2100
2180
35
2
2080
40
Figure 5. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
65
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0
0.1
12
14
VDD = 28 Vdc
Pout = 60 W (PEP), IDQ = 500 mA
Two Tone Measurement, 100 kHz Tone Spacing
40
55
45
35
1.0
5
15
30
10
25
20
10
11
2140
2160
6
14
100
10
0.1
10
2200
1.0
100
30
35
0
10
25
20
η
IRL
IMD
10
30
40
3rd Order
5th Order
7th Order
25
60
50
40
30
80
20
50
70
60
40
30
13
IRL,
INPUT
RETURN
LOSS
(dB)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
32
24
13
14
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
28
22
12.5
12
13.5
15
25
60
25
35
50
55
20
30
45
40
16
ACPR
VDD = 28 Vdc
IDQ = 700 mA, f = 2140 MHz, Channel Spacing
(Channel Bandwidth): 5 MHz @ 4.096 MHz BW
15 DTCH
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
10
900 mA
700 mA
500 mA
VDD = 28 Vdc
f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
VDD = 28 Vdc
IDQ = 700 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
G
ps
,POWER
GAIN
(dB)
900 mA
700 mA
500 mA
VDD = 28 Vdc
f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
G
ps
,POWER
GAIN
(dB)
38
24
28
34
36
22
26
32
30
26
30
Gps
η
Gps
IMD
12
48
Pout = 60 W (PEP), IDQ = 500 mA
f = 2140 MHz
Two Tone Measurement,
100 kHz Tone Spacing
相關PDF資料 |
PDF描述 |
|---|---|
| MRF21085R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21085S | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21085LS | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21090R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21090SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21060S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21060SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21085 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21085LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21085LS | 制造商:Motorola Inc 功能描述: |
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