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參數(shù)資料
| 型號(hào)： | MRF21090SR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 402K |
| 代理商： | MRF21090SR3 |
MRF21090R3 MRF21090SR3
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications.
Typical W-CDMA Performance for 2140 MHz, 28 Volts
4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:
Output Power — 11.5 Watts
Efficiency — 16%
Gain — 12.2 dB
ACPR — -45 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
270
1.54
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.65
°C/W
Document Number: MRF21090
Rev. 8, 5/2006
Freescale Semiconductor
Technical Data
MRF21090R3
MRF21090SR3
2110-2170 MHz, 90 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF21090SR3
CASE 465B-03, STYLE 1
NI-880
MRF21090R3
Freescale Semiconductor, Inc., 2006. All rights reserved.
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