- 您現(xiàn)在的位置：買賣IC網 > PDF目錄96050 > MRF21090SR3 (FREESCALE SEMICONDUCTOR INC) S BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數資料
| 型號： | MRF21090SR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 402K |
| 代理商： | MRF21090SR3 |
RF Device Data
Freescale Semiconductor
MRF21090R3 MRF21090SR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
MRF21090R3
MRF21090SR3
2 (Minimum)
1 (Minimum)
Machine Model
MRF21090R3
MRF21090SR3
M3 (Minimum)
M4 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
V(BR)DSS
65
—
Vdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.2
—
S
Gate Threshold Voltage
(VDS = 10 V, ID = 300 μA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 750 mA)
VGS(Q)
3
3.8
5
Vdc
Drain-Source On-Voltage
(VGS = 10 V, ID = 1 A)
VDS(on)
—
0.1
0.6
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
4.2
—
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
10
11.7
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
30
33
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
-30
-27.5
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
-12
-9.0
dB
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz)
Gps
—
11.7
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz)
η
—
41
—
%
1. Part is internally matched both on input and output.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF21120R6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF226 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF227 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39 |
| MRF232 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF233 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF21120 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF21120R6 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21125 | 制造商:Motorola Inc 功能描述: |
| MRF21125R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
發(fā)布緊急采購，3分鐘左右您將得到回復。