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參數(shù)資料
| 型號(hào)： | MRF21030R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400, CASE 465E-04, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 442K |
| 代理商： | MRF21030R3 |
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MRF21030R3 MRF21030LR3 MRF21030SR3 MRF21030LSR3
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications.
Wideband CDMA Performance: -45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40″ Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
Watts
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.1
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF21030/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF21030R3
MRF21030LR3
MRF21030SR3
MRF21030LSR3
2.2 GHz, 30 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465E-04, STYLE 1
NI-400
MRF21030R3, LR3
CASE 465F-04, STYLE 1
NI-400S
MRF21030SR3, LSR3
Motorola, Inc. 2003
REV 9
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| MRF21060SR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRF21085R3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21085S | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF21085LS | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21030S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21030SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21045 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21045LR3 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21045LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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