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參數(shù)資料
| 型號： | MRF21030R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-400, CASE 465E-04, 2 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 442K |
| 代理商： | MRF21030R3 |
MRF21030R3 MRF21030LR3 MRF21030SR3 MRF21030LSR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA
Two-Tone Measurement, 100 kHz Tone Spacing
η
IRL
IMD
Gps
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
ADJACENT
CHANNEL
POWER
RA
TIO
(dB)
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
0
2120
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
30
20
2100
2180
2
2080
-35
Figure 5. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
-55
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0
15
16
60
-45
-35
-15
-30
10
20
10
14
2140
2160
45
100
10
1.0
13
2200
100
30
40
-5
-25
-20
10
3rd Order
5th Order
-25
-50
-40
-30
-20
-50
-70
-60
-40
-30
IRL
,INPUT
RETURN
L
OSS
(dB)
IMD,
INTERMODUL
ATION
DIST
ORTION
(dBc)
,DRAIN
EFFICIENCY
(%),
η
G
ps
,POWER
GAIN
(dB)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
34
24
-30
-22
IMD,
INTERMODUL
ATION
DIST
ORTION
(dBc)
28
20
-34
-38
-26
15
25
-70
-30
-50
-20
-40
-60
6
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
IMD,
INTERMODUL
ATION
DIST
ORTION
(dBc)
10
200 mA
250 mA
400 mA
VDD = 28 Vdc, f = 2140 MHz
Two-Tone Measurement,
100 kHz Tone Spacing
IMD,
INTERMODUL
ATION
DIST
ORTION
(dBc)
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
Two-Tone Measurement,
100 kHz Tone Spacing
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, f = 2140 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
G
ps
,POWER
GAIN
(dB)
13
13.5
15
14.5
14
26
30
Pout = 30 W (PEP)
IDQ = 250 mA, f = 2140 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
η
Gps
IMD
01
3
350 mA
300 mA
200 mA
250 mA
400 mA
350 mA
300 mA
22
32
7th Order
50
-10
ACPR
-32
-24
-36
-28
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21030S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21030SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21045 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21045LR3 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21045LR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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