參數(shù)資料
型號(hào): MRF1946A
廠(chǎng)商: ADVANCED SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 28K
代理商: MRF1946A
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 25 mA
36
V
BVCEO
IC = 25 mA
16
V
BVEBO
IE = 5.0 mA
4.0
V
ICES
VCE = 15 V
5.0
mA
hFE
VCE = 5.0 V
IC = 1.0 A
40
75
150
---
Cob
VCB = 15 V
f = 1.0 MHz
75
100
pF
GPE
η
VCC = 12.5 V
Pout = 30 W
f = 175 MHz
10
60
11
70
DB
%
ψ
VCC = 15.5 V
PIN = 2.0 dB Overdrive
Load VSWR = 30:1 ALL PHASE ANGLES
No Degradation in Power Output
NPN SILICON RF POWER TRANSISTOR
MRF1946A
DESCRIPTION:
The
MRF1946A is Designed for
12.5 V 175 MHz Large-Signal Power
Amplifier Applications.
FEATURES INCLUDE:
High Common Emitter Power Gain
Output Power = 30 W
MAXIMUM RATINGS
IC
8.0 A
VCE
16 V
VCB
36 V
PDISS
100 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θ
JC
1.75 °C/W
PACKAGE STYLE .380" 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
C
B
E
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