參數(shù)資料
型號: MRF19090R3
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-880, CASE 465B-03, 2 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 341K
代理商: MRF19090R3
MRF19090R3 MRF19090SR3
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 A)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
10
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
Adc
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
7.2
S
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 Adc)
VGS(th)
2.0
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
VGS(Q)
2.5
3.8
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.10
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
4.2
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
Gps
10
11.5
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
33
35
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
-30
-28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
-12
dB
Pout, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz)
P1dB
90
W
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
相關(guān)PDF資料
PDF描述
MRF19090R3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF19120 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF1946A VHF BAND, Si, NPN, RF POWER TRANSISTOR
MRF1946 VHF BAND, Si, NPN, RF POWER TRANSISTOR
MRF20030R L BAND, Si, NPN, RF POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF19090S 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B
MRF19090SR3 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF19120 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF19120S 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF19125 制造商:Freescale Semiconductor 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391