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參數(shù)資料
| 型號： | MRF136 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL MOS BROADBAND RF POWER FETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-07, 4 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 284K |
| 代理商： | MRF136 |
1
MRF136 MRF136Y
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF MOSFET Line
!
. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range, in either single ended or push–pull configuration.
Guaranteed 28 Volt, 150 MHz Performance
MRF136
MRF136Y
Output Power = 15 Watts
Output Power = 30 Watts
Narrowband Gain = 16 dB (Typ)
Broadband Gain = 14 dB (Typ)
Efficiency = 60% (Typical)
Efficiency = 54% (Typical)
Small–Signal and Large–Signal
Characterization
100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
Space Saving Package For
Push–Pull Circuit
Applications — MRF136Y
Excellent Thermal Stability,
Ideally Suited For Class A
Operation
Facilitates Manual Gain
Control, ALC and
Modulation Techniques
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MRF136
MRF136Y
Drain–Source Voltage
VDSS
VDGR
VGS
ID
PD
65
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
65
65
Vdc
±
40
Vdc
Drain Current — Continuous
2.5
5.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
55
0.314
100
0.571
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MRF136
MRF136Y
Thermal Resistance, Junction to Case
R
θ
JC
3.2
1.75
°
C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF136/D
SEMICONDUCTOR TECHNICAL DATA
15 W, 30 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FETs
CASE 211–07, STYLE 2
MRF136
CASE 319B–02, STYLE 1
MRF136Y
D
G
S
D
G
S
(FLANGE)
MRF136
MRF136Y
D
G
REV 6
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| MRF137 | N-CHANNEL MOS BROADBAND RF POWER FET |
| MRF140 | N-CHANNEL MOS LINEAR RF POWER FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF136MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET 制造商:M/A-COM Technology Solutions 功能描述:MRF136MP |
| MRF136Y | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 5A 2PIN CASE 319B-02 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET 制造商:M/A-COM Technology Solutions 功能描述:Trans RF MOSFET N-CH 65V 5A 5-Pin Case 319B-02 |
| MRF137 | 功能描述:射頻MOSFET電源晶體管 5-400MHz 30Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF13750H-915MHZ | 功能描述:MRF13750H-915MHZ 制造商:nxp usa inc. 系列:- 零件狀態(tài):在售 晶體管類型:LDMOS（雙） 頻率:700MHz ~ 1.3GHz 增益:20.6dB 電壓 - 測試:50V 額定電流:10μA 噪聲系數(shù):- 功率 - 輸出:650W 電壓 - 額定:105V 封裝/外殼:SOT-979A 供應商器件封裝:NI-1230H-4S 標準包裝:1 |
| MRF13750HR5 | 功能描述:RF POWER LDMOS TRANSISTOR 750 W 制造商:nxp usa inc. 系列:- 零件狀態(tài):在售 晶體管類型:LDMOS（雙） 頻率:700MHz ~ 1.3GHz 增益:20.6dB 電壓 - 測試:50V 額定電流:10μA 噪聲系數(shù):- 功率 - 輸出:650W 電壓 - 額定:105V 封裝/外殼:SOT-979A 供應商器件封裝:NI-1230H-4S 標準包裝:1 |
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