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參數(shù)資料
| 型號(hào)： | MRF136 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | N-CHANNEL MOS BROADBAND RF POWER FETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-07, 4 PIN |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 284K |
| 代理商： | MRF136 |
MRF136 MRF136Y
10
MOTOROLA RF DEVICE DATA
DESIGN CONSIDERATIONS
The MRF136 and MRF136Y are RF power N–Channel
enhancement mode field–effect transistors (FETs) designed
especially for HF and VHF power amplifier applications.
Motorola RF MOS FETs feature planar design for optimum
manufacturability.
Motorola Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
The major advantages of RF power FETs include high gain,
low noise, simple bias systems, relative immunity from ther-
mal runaway, and the ability to withstand severely mis-
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control signal,
thus facilitating manual gain control, ALC and modulation.
DC BIAS
The MRF136 and MRF136Y are enhancement mode FETs
and, therefore, do not conduct when drain voltage is applied
without gate bias. A positive gate voltage causes drain current
to flow (see Figure 11). RF power FETs require forward bias
for optimum gain and power output. A Class AB condition with
quiescent drain current (IDQ) in the 25–100 mA range is
sufficient for many applications. For special requirements
such as linear amplification, IDQ may have to be adjusted to
optimize the critical parameters.
The MOS gate is a dc open circuit. Since the gate bias circuit
does not have to deliver any current to the FET, a simple
resistive divider arrangement may sometimes suffice for this
function. Special applications may require more elaborate
gate bias systems.
GAIN CONTROL
Power output of the MRF136 and MRF136Y may be
controlled from rated values down to the milliwatt region (>20
dB reduction in power output with constant input power) by
varying the dc gate voltage. This feature, not available in
bipolar RF power devices, facilitates the incorporation of
manual gain control, AGC/ALC and modulation schemes into
system designs. A full range of power output control may
require dc gate voltage excursions into the negative region.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for MRF136 and MRF136Y.
See Motorola Application Note AN721, Impedance Matching
Networks Applied to RF Power Transistors. Both small signal
scattering parameters (MRF136 only) and large signal
impedance parameters are provided. Large signal imped-
ances should be used for network designs wherever possible.
While the s parameters will not produce an exact design
solution for high power operation, they do yield a good first
approximation. This is particularly useful at frequencies
outside those presented in the large signal impedance plots.
RF power FETs are triode devices and are therefore not
unilateral. This, coupled with the very high gain, yields a
device capable of self oscillation. Stability may be achieved
using techniques such as drain loading, input shunt resistive
loading, or feedback. S parameter stability analysis can
provide useful information in the selection of loading and/or
feedback to insure stable operation. The MRF136 was
characterized with a 27 ohm input shunt loading resistor, while
the MRF136Y was characterized with a resistive feedback
loop around each of its two active devices.
For further discussion of RF amplifier stability and the use
of two port parameters in RF amplifier design, see Motorola
Application Note AN215A on page 6–204 in the RF Device
Data (DL110 Rev 1).
LOW NOISE OPERATION
Input resistive loading will degrade noise performance, and
noise figure may vary significantly with gate driving imped-
ance. A low loss input matching network with its gate
impedance optimized for lowest noise is recommended.
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