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參數(shù)資料
| 型號： | MRF141G |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL BROADBAND RF POWER MOSFET |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 375-04, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 143K |
| 代理商： | MRF141G |
1
MRF141G
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
Guaranteed Performance at 175 MHz, 28 V:
Output Power — 300 W
Gain — 12 dB (14 dB Typ)
Efficiency — 50%
Low Thermal Resistance — 0.35
°
C/W
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGO
VGS
ID
PD
65
Vdc
Drain–Gate Voltage
65
Vdc
Gate–Source Voltage
±
40
Vdc
Drain Current — Continuous
32
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
500
2.85
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.35
°
C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF141G/D
SEMICONDUCTOR TECHNICAL DATA
300 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375–04, STYLE 2
D
G
S
(FLANGE)
D
G
REV 2
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