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參數(shù)資料
| 型號： | MRF15060 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER BIPOLAR TRANSISTORS |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 164K |
| 代理商： | MRF15060 |
1
MRF15060 MRF15060S
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1996
The RF Sub–Micron Bipolar Line
Designed for broadband commercial and industrial applications at frequen-
cies from 1400 to 1600 MHz. The high gain and broadband performance of
these devices makes them ideal for large–signal, common–emitter class A and
class AB amplifier applications in 26 volt amplitude modulated and multi–carrier
base station equipment.
Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 10 dB
Efficiency — 33%
Characterized with Series Equivalent Large–Signal Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
All Gold Metal for Ultra Reliability
Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP)
Output Power
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
25
Vdc
Collector–Emitter Voltage
60
Vdc
Emitter–Base Voltage
60
Adc
Collector Current – Continuous
8
Adc
Total Device Dissipation @ TC = 70
°
C
Derate above 70
°
C
185
1.43
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
0.7
Order this document
by MRF15060/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 1.49 GHz
RF POWER
BIPOLAR
TRANSISTORS
CASE 451–04, STYLE 1
(MRF15060)
CASE 451A–01, STYLE 1
(MF15060S)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MRF15060S | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER BIPOLAR TRANSISTORS |
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