參數(shù)資料
型號(hào)： MRF15060
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF POWER BIPOLAR TRANSISTORS
中文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 164K
代理商： MRF15060
MRF15060 MRF15060S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0 mAdc)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
V(BR)CEO
25
—
—
Vdc
V(BR)CES
60
—
—
Vdc
V(BR)EBO
3
3.5
—
Vdc
ICES
—
—
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1 Adc, VCE = 5 Vdc)
hFE
20
40
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)
Cob
—
55
—
pF
FUNCTIONAL TESTS
(In Motorola Test Circuit. See Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Gpe
10
11.7
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
η
33
38
—
dB
3rd Order Intermodulation Distortion
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
IMD
—
– 32
– 28
dB
Input Return Loss
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
IRL
12
20
—
dB
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz,
VSWR = 3:1, at All Phase Angles)
ψ
No Degradation in Output Power
(1)
For information only. This part is collector matched.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF15060S 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER BIPOLAR TRANSISTORS
MRF1507 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL NCHANNEL BROADBAND RF POWER MOSFET
MRF1507T1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LATERAL NCHANNEL BROADBAND RF POWER MOSFET
MRF15090 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR
MRF150J 功能描述:射頻MOSFET電源晶體管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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