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參數(shù)資料
| 型號： | MRF141G |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL BROADBAND RF POWER MOSFET |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 375-04, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 143K |
| 代理商： | MRF141G |
MRF141G
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 mA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
—
5.0
mAdc
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
μ
Adc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 10 A)
VDS(on)
0.1
0.9
1.5
Vdc
Forward Transconductance
(VDS = 10 V, ID = 5.0 A)
gfs
5.0
7.0
—
mhos
DYNAMIC CHARACTERISTICS
(1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
350
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
420
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
35
—
pF
FUNCTIONAL TESTS
(2)
Common Source Amplifier Power Gain
(VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz)
Gps
12
14
—
dB
Drain Efficiency
(VDD = 28 V, Pout = 300 W, f = 175 MHz, ID (Max) = 21.4 A)
η
45
55
—
%
Load Mismatch
(VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz,
VSWR 5:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTES:
1. Each side measured separately.
2. Measured in push–pull configuration.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF141MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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| MRF148AMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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