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參數(shù)資料
| 型號： | MRF141G |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL BROADBAND RF POWER MOSFET |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 375-04, 4 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 143K |
| 代理商： | MRF141G |
3
MRF141G
MOTOROLA RF DEVICE DATA
Figure 1. 175 MHz Test Circuit
C1 — Arco 402, 1.5–20 pF
C2 — Arco 406, 15–115 pF
C3, C4, C8, C9, C10 — 1000 pF Chip
C5, C11 — 0.1
μ
F Chip
C6 — 330 pF Chip
C7 — 200 pF and 180 pF Chips in Parallel
C12 — 0.47
μ
F Ceramic Chip, Kemet 1215 or Equivalent
C13 — Arco 403, 3.0–35 pF
L1 — 10 Turns AWG #16 Enameled Wire,
L1 —
Close Wound, 1/4
″
I.D.
L2 — Ferrite Beads of Suitable Material for
L2 —
1.5–2.0
μ
H Total Inductance
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhm, 1/2 W
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent.
T1 — 9:1 RF Transformer. Can be made of 15–18 Ohms
T1 —
Semirigid Co–Ax, 62–90 Mils O.D.
T2 — 1:9 RF Transformer. Can be made of 15–18 Ohms
T2 —
Semirigid Co–Ax, 70–90 Mils O.D.
Board Material — 0.062
″
Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,
ε
r = 5
NOTE: For stability, the input transformer T1 must be loaded
NOTE:
with ferrite toroids or beads to increase the common
NOTE:
mode inductance. For operation below 100 MHz. The
NOTE:
same is required for the output transformer.
See pictures for construction details.
Figure 2. DC Safe Operating Area
Figure 3. Gate–Source Voltage versus
Case Temperature
TYPICAL CHARACTERISTICS
R1
C4
C5
+
BIAS 0–6 V
–
C2
INPUT
C1
C3
T1
C6
C7
T2
C8
C9
L1
C10
C11
L2
C12
+
–
28 V
OUTPUT
C13
100
10
11
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
TC = 25
°
C
V
1.04
1.03
1.02
1.01
–25
TC, CASE TEMPERATURE (
°
C)
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
0.9
0
25
50
75
100
ID = 5 A
4 A
2 A
1 A
0.5 A
0.25 A
DUT
HIGH
IMPEDANCE
WINDINGS
CENTER
TAP
4:1
IMPEDANCE
RATIO
9:1
IMPEDANCE
RATIO
CONNECTIONS
TO LOW
IMPEDANCE
WINDINGS
CENTER
TAP
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