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參數(shù)資料
| 型號： | MRF137 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL MOS BROADBAND RF POWER FET |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 196K |
| 代理商： | MRF137 |
1
MRF137
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF MOSFET Line
N–Channel Enhancement–Mode
. . . designed for wideband large–signal output and driver stages up to
400 MHz range.
Guaranteed 28 Volt, 150 MHz Performance
Output Power = 30 Watts
Minimum Gain = 13 dB
Efficiency — 60% (Typical)
Small–Signal and Large–Signal Characterization
Typical Performance at 400 MHz, 28 Vdc, 30 W
Output = 7.7 dB Gain
100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz
Excellent Thermal Stability, Ideally Suited For Class A
Operation
Facilitates Manual Gain Control, ALC and Modulation
Techniques
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M
)
65
Vdc
Gate–Source Voltage
VGS
ID
PD
±
40
Vdc
Drain Current — Continuous
5.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
100
0.571
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.75
°
C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF137/D
SEMICONDUCTOR TECHNICAL DATA
30 W, to 400 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
CASE 211–07, STYLE 2
D
G
S
REV 6
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