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參數(shù)資料
| 型號： | MRF1150MB |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | MICROWAVE POWER TRANSISTORS |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 128K |
| 代理商： | MRF1150MB |
1
MRF1150MA MRF1150MB
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCBO
VEBO
IC
PD
70
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Peak (1)
12
Adc
Total Device Dissipation @ TC = 25
°
C (1) (2)
Derate above 25
°
C
583
3.33
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
R
θ
JC
0.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
NOTES:
1. Pulse Width = 10
μ
s, Duty Cycle = 1%.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80
μ
s Pulse on Tektronix 576 or equivalent.
V(BR)CES
70
—
—
Vdc
V(BR)CBO
70
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
ICBO
—
—
10
mAdc
hFE
10
30
—
—
(continued)
Order this document
by MRF1150MA/D
SEMICONDUCTOR TECHNICAL DATA
150 W PEAK, 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332–04, STYLE 1
(MRF1150MA)
CASE 332A–03, STYLE 1
(MRF1150MB)
REV 8
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