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參數(shù)資料
| 型號(hào)： | MRA0610-18A |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.250 INCH, MRA, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 14K |
| 代理商： | MRA0610-18A |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CES
I
C
= 100 mA
BV
EBO
I
E
= 1.25 mA
I
CBO
V
CB
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
UNITS
V
V
mA
---
3.5
2.5
10
100
C
ob
V
CB
= 28 V
f = 1.0 MHz
14
pF
G
PB
η
c
V
CE
= 28 V
P
out
= 18 W
f = 600 MHz & 1.0 GHz
7.8
50
dB
%
NPN SILICON RF POWER TRANSISTOR
MRA0610-18A
DESCRIPTION:
The
MRA0610-18A
is Designed for
Class C, Common Base Wideband
Large Signal Amplifier Applications
From 600 MHz to 1.0 GHz, With
Internal Compensating Matching
Network and Diffused Ballast
Resistors.
MAXIMUM RATINGS
I
C
2.5 A
(CONT)
V
CES
50 V
T
J
-65
O
C to +200
O
C
-65
O
C to +150
O
C
4.0
O
C/W
T
STG
θ
JC
PACKAGE STYLE MRA .25
MILLIMETERS
MIN
8.00
0.08
1.98
1.40
4.32
18.77
5.33
6.17
7.74
14.10
3.17
INCHES
MIN
O.351
0.003
0.078
0.055
0.170
0.739
0.210
0.243
0.210
0.555
0.125
DIM
A
B
C
D
E
F
G
H
J
K
L
MAX
8.38
0.15
2.34
1.65
5.08
19.03
5.84
6.43
8.64
14.35
3.43
MAX
0.330
0.006
0.092
0.065
0.200
0.749
0.230
0.253
0.240
0.565
0.135
1 = Collector 2 = Emitter
3 = Base
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRA0610-23 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRA0610-3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MICROAMP-R P-BAND CLASS C POWER TRANSISTORS |
| MRA0610-40A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MICROAMP-R P-BAND CLASS C POWER TRANSISTORS |
| MRA0610-9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MICROAMP-R P-BAND CLASS C POWER TRANSISTORS |
| MRA0610H | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:UHF POWER TRANSISTORS |
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