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參數(shù)資料
| 型號(hào)： | MRA1417-11 |
| 廠(chǎng)商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | MRA1417-11 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 80 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 28 V
h
FE
V
CE
= 5.0 V
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
3.5
10
UNITS
V
V
mA
---
2.0
100
I
C
= 4.0 A
C
ob
V
CB
= 28 V
f = 1.0 MHz
12
pF
P
G
η
C
V
CE
= 28 V
P
OUT
= 11 W f = 1700 MHz
7.4
45
dB
%
NPN SILICON RF POWER TRANSISTOR
MRA1417-11
PACKAGE STYLE 250 2L FLG (C)
1 = COLLECTOR 2 = BASE
3 = EMITTER
DESCRIPTION:
The
ASI
MRA1417-11
is a Common
Base Device Designed for Class C
Power Amplifier Applications up to 1.7
GHz.
FEATURES INCLUDE:
Gold Metallization
Emitter Ballasting
Input Matching
MAXIMUM RATINGS
I
C
4.0 A
V
CBO
50 V
P
DISS
12 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
4.5 °C/W
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