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參數(shù)資料
| 型號： | MRA1417-6H |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.250 X 0.250 INCH, FM-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 27K |
| 代理商： | MRA1417-6H |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 25 mA
BV
CES
I
C
= 25 mA
BV
EBO
I
E
= 3.0 mA
h
FE
V
CE
= 5.0 V
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
UNITS
V
V
V
55
3.5
I
C
= 100 mA
20
100
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
6.5
pF
P
G
η
C
V
CE
= 28 V
P
OUT
= 6.0 W f = 1400 - 1700 MHz
7.2
7.5
40
dB
%
NPN SILICON RF POWER TRANSISTOR
MRA1417-6H
PACKAGE STYLE .250 2L FLG (B)
1 = COLLECTOR 2 = BASE
3 = EMITTER
DESCRIPTION:
The
MRA1417-6H
is a Common
Base Device Designed for Class C
Amplifier Applications in L-Band FM
Microwave Links.
FEATURES INCLUDE:
Gold Metallization
Emitter Ballasting
Input Matching
MAXIMUM RATINGS
I
C
1.0 A
V
CBO
50 V
P
DISS
19 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
9.0
O
C/W
T
J
T
STG
θ
JC
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