參數(shù)資料
型號: MRAL1720-5
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: FM-2
文件頁數(shù): 1/1頁
文件大?。?/td> 33K
代理商: MRAL1720-5
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 40 mA
BV
EBO
I
E
= 0.5 mA
I
CBO
V
CB
= 22 V
h
FE
V
CE
= 5.0 V I
C
= 200 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
42
V
V
mA
---
3.5
1.0
10
100
C
ob
V
CB
= 28 V
f = 1.0 MHz
8.0
pF
G
PB
η
c
V
CE
= 22 V
P
out
= 5.0 W
f = 1.7 GHz & 2.0 GHz
6.5
40
dB
%
NPN SILICON RF POWER TRANSISTOR
MRAL1720-5
DESCRIPTION:
The
ASI
MRAL1720-5
is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications up
to 2.0 GHz.
FEATURES:
Diffused Ballast Resistors.
Internal Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
1.0 A
(CONT)
V
CES
42 V
V
EBO
3.5 V
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
8.0 °C/W
PACKAGE STYLE 400 4L FLG
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