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參數(shù)資料
| 型號(hào)： | MRA1014-35 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | MRA1014-35 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 200 mA
BV
EBO
I
E
= 2.5 mA
I
CBO
V
CB
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
50
V
V
mA
---
3.5
5.0
10
100
C
ob
V
CB
= 28 V
f = 1.0 MHz
24
pF
G
PB
η
c
V
CE
= 28 V
P
out
= 35 W
f = 1.0 GHz & 1.4 GHz
7.0
50
dB
%
NPN SILICON RF POWER TRANSISTOR
MRA1014-35
DESCRIPTION:
The
ASI
MRA1014-35
is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications
From 1.0 GHz to 1.4 GHz.
FEATURES:
Diffused Ballast Resistors.
Internal Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
5.0 A
(CONT)
V
CES
50 V
V
EBO
3.5 V
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
2.5 °C/W
PACKAGE STYLE .320 SQ 2L FLG
C
E
B
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