
301
7810C–AVR–10/12
Atmel ATmega328P [Preliminary]
If polling (RDY/BSY) is not used, the used must wait at least t
WD_EEPROM before issuing
the next byte (See
Table 27-16). In a chip erased device, no 0xFF in the data file(s) need
to be programmed.
6.
Any memory location can be verified by using the Read instruction which returns the con-
tent at the selected address at serial output MISO.
7.
At the end of the programming session, RESET can be set high to commence normal
operation.
8.
Power-off sequence (if needed):
Set RESET to “1”.
Turn V
CC power off.
27.8.3
Serial Programming Instruction set
Table 27-16. Typical Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol
Minimum Wait Delay
t
WD_FLASH
4.5 ms
tWD_EEPROM
3.6 ms
t
WD_ERASE
9.0 ms
Table 27-17. Serial Programming Instruction Set (Hexadecimal values)
Instruction/Operation
Instruction Format
Byte 1
Byte 2
Byte 3
Byte4
Programming Enable
$AC
$53
$00
Chip Erase (Program Memory/EEPROM)
$AC
$80
$00
Poll RDY/BSY
$F0
$00
data byte out
Load Instructions
Load Extended Address by
te(1)$4D
$00
Extended adr
$00
Load Program Memory Page, High byte
$48
$00
adr LSB
high data byte in
Load Program Memory Page, Low byte
$40
$00
adr LSB
low data byte in
Load EEPROM Memory Page (page access)
$C1
$00
0000 000aa
data byte in
Read Instructions
Read Program Memory, High byte
$28
adr MSB
adr LSB
high data byte out
Read Program Memory, Low byte
$20
adr MSB
adr LSB
low data byte out
Read EEPROM Memory
$A0
0000 00aa
aaaa aaaa
data byte out
Read Lock bits
$58
$00
data byte out
Read Signature Byte
$30
$00
0000 000aa
data byte out
Read Fuse bits
$50
$00
data byte out
Read Fuse High bits
$58
$08
$00
data byte out
Read Extended Fuse Bits
$50
$08
$00
data byte out