
157
8111C–MCU Wireless–09/09
AT86RF231
12.3
Digital Pin Characteristics
.Test Conditions: T
OP = 25°C (unless otherwise stated)
Note:
1. The capacitive load should not be larger than 50 pF for all I/Os when using the default driver strength settings, refer to
Sec-12.4
Digital Interface Timing Characteristics
Test Conditions: T
OP = 25°C, VDD = 3.0V, CL = 50 pF (unless otherwise stated).
Table 12-3.
Digital Pin Characteristics
No.
Symbol
Parameter
Condition
Min.
Typ.
Max
Units
12.3.1
V
IH
High level input voltage
(1)V
DD - 0.4
V
12.3.2
VIL
Low level input voltage
(1)0.4
V
12.3.3
V
OH
High level output voltage
(1)For all output driver strengths defined
in TRX_CTRL_0
V
DD - 0.4
V
12.3.4
VOL
Low level output voltage
(1)For all output driver strengths defined
in TRX_CTRL_0
0.4
V
Table 12-4.
Digital Interface Timing Characteristics
No.
Symbol
Parameter
Condition
Min.
Typ.
Max
Units
12.4.1
f
sync
SCLK frequency
synchronous operation
8
MHz
12.4.2
fasync
SCLK frequency
asynchronous operation
7.5
MHz
12.4.3
t1
/SEL low to MISO active
180
ns
12.4.4
t
2
SCLK to MISO out
data hold time
10
ns
12.4.5
t3
MOSI setup time
10
ns
12.4.6
t
4
MOSI hold time
10
ns
12.4.7
t
5
LSB last byte to MSB next byte
ns
12.4.8
t6
/SEL high to MISO tri state
10
ns
12.4.9
t
7
SLP_TR pulse width
TX start trigger
62.5
ns
12.4.10
t
8
SPI idle time
(SEL rising to falling edge)
SPI read/write, standard SRAM
and Frame Buffer access modes,
Idle time between consecutive SPI
accesses
250
ns
12.4.11
t
8
SPI idle time
(SEL rising to falling edge)
SPI Fast SRAM read/write access
Idle time between consecutive SPI
accesses
500
ns
12.4.12
t9
Last SCLK to /SEL high
250
ns
12.4.13
t
10
Reset pulse width
10 clock cycles at 16 MHz
625
ns
12.4.14
t11
SPI access latency after reset
10 clock cycles at 16 MHz
625
ns
12.4.15
t12
AES core cycle time
24
s