參數(shù)資料
型號(hào): MP4208
元件分類: JFETs
英文描述: 5 A, 60 V, 0.5 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-25A1D, SIP-10
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 0K
代理商: MP4208
MP4208
2006-10-27
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from channel to
ambient
(4-device operation, Ta = 25°C)
ΣRth (ch-a)
31.3
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
This transistor is an electrostatic-sensitive device. Please handle withccaution.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
1
3
S
RDS (ON)
ID = 2.5 A, VGS = 4 V
0.3
0.5
Drain-source ON resistance
RDS (ON)
ID = 2.5 A, VGS = 10 V
0.2
0.3
Input capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
630
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
95
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
290
pF
Rise time
tr
25
Turn-on time
ton
45
Fall time
tf
55
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs
200
ns
Total gate charge
(gate-source plus gate-drain)
Qg
22
nC
Gate-source charge
Qgs
16
nC
Gate-drain (“miller”) charge
Qgd
ID = 5 A, VGS = 10 V, VDD ≈ 48 V
6
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
IDR
5
A
Peak drain reverse current
IDRP
10
A
Diode forward voltage
VDSF
IDR = 5 A, VGS = 0 V
1.0
2.0
V
Reverse recovery time
trr
80
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR/dt = 50 A/μs
0.1
μC
10 V
0 V
VGS
R
L=
12
VDD ≈ 30 V
ID = 2.5 A
VOUT
50
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