參數(shù)資料
型號: MMBZ33VAL/DG
廠商: NXP SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: TVS DIODE, TO-236AB
封裝: HALOGEN FREE, PLASTIC, SMD, 3 PIN
文件頁數(shù): 8/15頁
文件大小: 78K
代理商: MMBZ33VAL/DG
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
2 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
1.4 Quick reference data
2.
Pinning information
Table 2.
Quick reference data
Tamb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VRWM
reverse standoff voltage
MMBZ12VAL
MMBZ12VAL/DG
-
8.5
V
MMBZ15VAL
MMBZ15VAL/DG
--12
V
MMBZ18VAL
MMBZ18VAL/DG
-
14.5
V
MMBZ20VAL
MMBZ20VAL/DG
--17
V
MMBZ27VAL
MMBZ27VAL/DG
--22
V
MMBZ33VAL
MMBZ33VAL/DG
--26
V
Cd
diode capacitance
f = 1 MHz; VR =0V
MMBZ12VAL
MMBZ12VAL/DG
-
110
140
pF
MMBZ15VAL
MMBZ15VAL/DG
-
85
105
pF
MMBZ18VAL
MMBZ18VAL/DG
-
7090pF
MMBZ20VAL
MMBZ20VAL/DG
-
6580pF
MMBZ27VAL
MMBZ27VAL/DG
-
4860pF
MMBZ33VAL
MMBZ33VAL/DG
-
4555pF
Table 3.
Pinning
Pin
Description
Simplied outline
Graphic symbol
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
12
3
006aaa154
12
3
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