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參數(shù)資料
| 型號(hào)： | MMBZ33VAL/DG |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | TVS DIODE, TO-236AB |
| 封裝： | HALOGEN FREE, PLASTIC, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/15頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | MMBZ33VAL/DG |
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1.
Product prole
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode conguration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
[1]
All types available as /DG halogen-free version.
1.2 Features
1.3 Applications
MMBZxVAL series
Double ESD protection diodes for transient overvoltage
suppression
Rev. 01 — 1 September 2008
Product data sheet
Table 1.
Product overview
Type number[1]
Package
Conguration
NXP
JEDEC
MMBZ12VAL
SOT23
TO-236AB
dual common anode
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
I Unidirectional ESD protection of
two lines
I ESD protection up to 30 kV (contact
discharge)
I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)
I Low diode capacitance: Cd ≤ 140 pF
I IEC 61643-321
I Rated peak pulse power: PPPM ≤ 40 W I AEC-Q101 qualied
I Ultra low leakage current: IRM ≤ 5nA
I Computers and peripherals
I Automotive electronic control units
I Audio and video equipment
I Portable electronics
I Cellular handsets and accessories
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBZ12VAL/DG | TVS DIODE, TO-236AB |
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| MMBZ5225BW | 3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5228BW | 3.9 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMBZ5234BW | 6.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBZ33VALT1 | 功能描述:TVS二極管陣列 33V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ33VALT1G | 功能描述:TVS二極管陣列 33V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ33VALT1G | 制造商:ON Semiconductor 功能描述:TVS Diode |
| MMBZ33VALT3 | 功能描述:TVS二極管陣列 33V 225mW Dual RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| MMBZ33VALT3G | 功能描述:TVS二極管陣列 33V 225mW Dual Common Anode RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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