參數(shù)資料
型號: MMBZ33VAL/DG
廠商: NXP SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: TVS DIODE, TO-236AB
封裝: HALOGEN FREE, PLASTIC, SMD, 3 PIN
文件頁數(shù): 14/15頁
文件大?。?/td> 78K
代理商: MMBZ33VAL/DG
MMBZXVAL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 1 September 2008
8 of 15
NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
MMBZ27VAL: unidirectional and bidirectional
Tamb =25 °C
Fig 3.
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
f = 1 MHz; Tamb =25 °C
(1) MMBZ15VAL: unidirectional
(2) MMBZ15VAL: bidirectional
(3) MMBZ27VAL: unidirectional
(4) MMBZ27VAL: bidirectional
MMBZ27VAL: VRWM =22V
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Reverse leakage current as a function of
ambient temperature; typical values
006aab320
102
10
103
PPPM
(W)
1
tp (ms)
102
103
102
101
10
1
Tj (°C)
0
200
150
50
100
006aab321
0.4
0.8
1.2
PPPM
0
PPPM(25°C)
VR (V)
025
20
10
15
5
006aab322
40
60
20
80
100
Cd
(pF)
0
(1)
(2)
(3)
(4)
006aab323
101
102
10
1
102
IRM
(nA)
103
Tamb (°C)
75
175
125
25
75
25
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