參數(shù)資料
型號(hào): MMBTA56
廠商: RECTRON LTD
元件分類: 小信號(hào)晶體管
英文描述: 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù): 1/4頁
文件大小: 267K
代理商: MMBTA56
FEATURES
MECHANICAL DATA
Case: Molded plastic
*
Epoxy: UL 94V-O rate flame retardant
*
Lead: MIL-STD-202E method 208C guaranteed
*
Mounting position: Any
*
* Weight: 0.008 gram
SOT-23
MMBTA56
2007-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Marking
Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
2GM
Collector - Emitter Breakdown Voltage(IC= -1mA, IB=0)
SYMBOL
MAX
MIN
TYP
-80
-4
-
-1.2
MHz
-
-0.1
100
50
V(BR)CBO
V(BR)CEO
VBE(on)
V(BR)EBO
UNITS
V
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
Dimensions in inches and (millimeters)
1
3
COLLECTOR
EMITTER
BASE
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
0.110(2.80)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.071(1.80)
0.019(2.00)
0.089(2.25)
0.100(2.55)
0.012(0.30)
0.020(0.50)
0.000(0.00)
0.004(0.10)
0.035(0.90)
0.043(1.10)
0.003(0.08)
0.006(0.15)
ICBO
hFE
Collector Cut - Off Current (VCB= -80V, IE=0)
DC Current Gain(VCE= -1V, IC= -100mA)
Collector - Emitter Saturation Voltage(IC= -100 mA, IB= -10mA)
Base - Emitter on Voltage(VCE=-1V,IC=-100mA)
Transition Frequency(VCE= -1V, IC= -100mA, f =100MHz)
CHARACTERISTICS
* Power dissipation
PCM :
0.225
W(Tamb=25OC)
* Collector current
ICM :
-0.5
A
* Collector-base voltage
VCBO :
-80
V
* Operating and storage junction temperature range
TJ,Tstg:
-55OC to +150OC
VCE(sat)
fT
-
-0.25
-
-0.1
Collector Cut - Off Current (VCE= -60V, IB=0)
ICEO
-
Collector - Base Breakdown Voltage (IC=-100 uA, IE =0)
Emitter - Base Breakdown Voltage (IE= -100 uA, IC = 0)
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