參數(shù)資料
型號(hào)： MMBTA64-13
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 75K
代理商： MMBTA64-13
DS30055 Rev. 6 - 2
1 of 3
MMBTA63 / MMBTA64
www.diodes.com
Diodes Incorporated
MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA13 /MMBTA14)
Ideal for Medium Power Amplification and Switching
High Current Gain
Available in Lead Free/RoHS Compliant Version (Note 3)
Characteristic
Symbol
MMBTA63
MMBTA64
Unit
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-10
V
Collector Current - Continuous (Note 1)
IC
-500
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
B
E
H
G
D
K
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Terminal Connections: See Diagram
MMBTA63 Marking (See Page 2): K2E, K3E
MMBTA64 Marking (See Page 2): K3E
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V(BR)CEO
-30
V
IC = -100
mAVBE = 0V
Collector Cutoff Current
ICBO
-100
nA
VCB = -30V, IE = 0
Emitter Cutoff Current
IEBO
-100
nA
VEB = -10V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
MMBTA63
MMBTA64
MMBTA63
MMBTA64
hFE
5,000
10,000
20,000
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-1.5
V
IC = -100mA, IB = -100
mA
Base- Emitter Saturation Voltage
VBE(SAT)
-2.0
V
IC = -100mA, VCE = -5.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
125
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
E
B
C
Features
相關(guān)PDF資料
PDF描述
MMBTA64-HIGH 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AA
MPSA64/D89Z-J22Z 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MPSA64/D81Z-J22Z 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MPSA64-J22Z 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MPSA64/D75Z-J14Z 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTA64-7 功能描述:達(dá)林頓晶體管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA64-7-F 功能描述:達(dá)林頓晶體管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA64LT1 功能描述:達(dá)林頓晶體管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA64LT1G 功能描述:達(dá)林頓晶體管 500mA 30V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA64LT3G 功能描述:達(dá)林頓晶體管 SS DL XSTR PNP 30V RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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