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參數(shù)資料
| 型號： | MMBTA56/E8 |
| 廠商： | GENERAL SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MMBTA56/E8 |
MMBTA56
Vishay Semiconductors
formerly General Semiconductor
Document Number 88230
www.vishay.com
20-Feb-02
1
Small Signal Transistor (PNP)
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the NPN transistor MMBTA06
is recommended.
This transistor is also available in the TO-92 case with
the type designation MPSA56.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
–VCBO
80
V
Collector-Emitter Voltage
–VCEO
80
V
Emitter-Base Voltage
–VEBO
4.0
V
Collector Current
–IC
500
mA
Power Dissipation at TA = 25°C
Ptot
277(1)
mW
300(2)
Thermal Resistance Junction to Ambient Air
R
θJA
450(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Notes: (1) Device on fiberglass substrate, see layout.
(2) Device on alumina substrate.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code:
2GM
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
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| MMBTA56-GS08 | 功能描述:兩極晶體管 - BJT PNP Switching/Amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT1 | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT1G | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP 80V SOT-23 |
| MMBTA56LT1T | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 80V 0.5A 3-Pin SOT-23 T/R |
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