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參數資料
| 型號： | MMBT6517LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MMBT6517LT3 |
MMBT6517LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA)
V(BR)CEO
350
-
V
Collector-Base Breakdown Voltage
(IC = 100 mA)
V(BR)CBO
350
-
V
Emitter-Base Breakdown Voltage
(IE = 10 mA)
V(BR)EBO
6.0
-
V
Collector Cutoff Current
(VCB = 250 V)
ICBO
-
50
nA
Emitter Cutoff Current
(VEB = 5.0 V)
IEBO
-
50
nA
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 30 mA, VCE = 10 V)
(IC = 50 mA, VCE = 10 V)
(I= 100 mA, VCE = 10 V)
hFE
20
30
20
15
-
200
-
Collector-Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 1.0 mA)
(IC = 20 mA, IB = 2.0 mA)
(IC = 30 mA, IB = 3.0 mA)
(IC = 50 mA, IB = 5.0 mA)
VCE(sat)
-
0.30
0.35
0.50
1.0
V
Base-Emitter Saturation Voltage
(IC = 10 mA, IB = 1.0 mA)
(IC = 20 mA, IB = 2.0 mA)
(IC = 30 mA, IB = 3.0 mA)
VBE(sat)
-
0.75
0.85
0.90
V
Base-Emitter On Voltage
(IC = 100 mA, VCE = 10 V)
VBE(on)
-
2.0
V
SMALL-SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
(IC = 10 mA, VCE = 20 V, f = 20 MHz)
fT
40
200
MHz
Collector-Base Capacitance
(VCB = 20 V, f = 1.0 MHz)
Ccb
-
6.0
pF
Emitter-Base Capacitance
(VEB = 0.5 V, f = 1.0 MHz)
Ceb
-
pF
3. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
ORDERING INFORMATION
Device Order Number
Package Type
Tape and Reel Size
MMBT6517LT1
SOT-23
3,000 / Tape & Reel
MMBT6517LT1G
SOT-23
(Pb-Free)
3,000 / Tape & Reel
MMBT6517LT3
SOT-23
10,000 / Tape & Reel
MMBT6517LT3G
SOT-23
(Pb-Free)
10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關PDF資料 |
PDF描述 |
|---|---|
| MMBT6517LT3 | 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT6517P | 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT6517 | 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT6520LT3 | 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT6520LT3 | 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT6517LT3G | 功能描述:兩極晶體管 - BJT 500mA 350V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6520LT1 | 功能描述:兩極晶體管 - BJT 500mA 350V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6520LT1G | 功能描述:兩極晶體管 - BJT 500mA 350V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6520LT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MMBT6520LT3 | 功能描述:兩極晶體管 - BJT 500mA 350V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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