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參數(shù)資料
| 型號： | MMBT6517LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 91K |
| 代理商： | MMBT6517LT3 |
Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 5
1
Publication Order Number:
MMBT6517LT1/D
MMBT6517LT1
High Voltage Transistor
NPN Silicon
Features
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
VCEO
350
V
Collector -Base Voltage
VCBO
350
V
Emitter - Base Voltage
VEBO
5.0
V
Base Current
IB
25
mA
Collector Current - Continuous
IC
100
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance,
Junction-to-Ambient
RqJA
556
°C/W
Total Device Dissipation
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance,
Junction-to-Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
MARKING DIAGRAM
http://onsemi.com
SOT-23 (TO-236AB)
CASE 318
STYLE 6
1Z M
G
1Z
= Device Code
M
= Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
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| MMBT6517LT3 | 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| MMBT6517 | 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT6520LT3 | 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT6517LT3G | 功能描述:兩極晶體管 - BJT 500mA 350V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6520LT1 | 功能描述:兩極晶體管 - BJT 500mA 350V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6520LT1G | 功能描述:兩極晶體管 - BJT 500mA 350V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT6520LT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MMBT6520LT3 | 功能描述:兩極晶體管 - BJT 500mA 350V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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