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參數(shù)資料
| 型號(hào)： | MMBT6427-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 71K |
| 代理商： | MMBT6427-13 |
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
DS30048 Rev. 6 - 2
1 of 3
MMBT6427
www.diodes.com
Diodes Incorporated
MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
12
V
Collector Current - Continuous (Note 2)
IC
500
mA
Power Dissipation (Note 2)
Pd
300
mW
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
C
B
E
J
L
TOP VIEW
M
B
C
H
G
D
K
E
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K1D
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
E
B
C
Features
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
High Current Gain
Available in Lead Free/RoHS Compliant Version (Note 1)
Note:
1. No purposefully added lead.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Thermal Characteristics
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Ambient (Note 2)
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
SPICE MODEL: MMBT6427
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相關(guān)代理商/技術(shù)參數(shù) |
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| MMBT6427-7 | 功能描述:達(dá)林頓晶體管 40V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBT6427-7-F | 功能描述:達(dá)林頓晶體管 40V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBT6427LT1 | 功能描述:達(dá)林頓晶體管 500mA 40V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBT6427LT1G | 功能描述:達(dá)林頓晶體管 500mA 40V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBT6427LT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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