參數(shù)資料
型號(hào)： MMBT3906T/R
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 131K
代理商： MMBT3906T/R
MMBT3906T
—
PNP
Epit
axial
Silicon
T
ransistor
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MMBT3906T Rev. 1.0.0
1
February 2008
MMBT3906T
PNP Epitaxial Silicon Transistor
Features
General purpose amplifier transistor.
Ultra-Small Surface Mount Package for all types.
Suitable for general switching & amplification
Well suited for portable application
As complementary type, NPN MMBT3904T is recommended
Absolute Maximum Ratings T
a = 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T
a=25°C unless otherwise noted
* Minimum land pad.
Electrical Characteristics* T
a=25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width
≤300us, Duty Cycle≤2%
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
200
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Max
Unit
PC
Collector Power Dissipation, by RθJA
250
mW
RθJA
Thermal Resistance, Junction to Ambient
500
°C/W
Symbol
Parameter
Test Condition
Min.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = -10μA, IE = 0
-40
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = -1mA, IB = 0
40
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -10μA, IC = 0
-5
V
ICEX
Collector Cut-off Current
VCE = -30V, VEB(OFF) =-0.3V
-50
nA
hFE
DC Current Gain
VCE = 1V, IC =- 0.1mA
VCE = 1V, IC = -1mA
VCE = 1V, IC = -10mA
VCE = 1V, IC = -50mA
VCE = 1V, IC = -100mA
60
80
100
60
30
300
VCE (sat)
Collector-Emitter Saturation Voltage
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
-0.25
-0.4
V
VBE (sat)
Base-Emitter Saturation Voltage
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
-0.65
-0.85
-0.95
V
fT
Current Gain Bandwidth Product
VCE = -20V, IC = -10mA, f = 100MHz
250
MHz
Cob
Output Capacitance
VCB = -5V, IE = 0, f = 1MHz
7.0
pF
Cib
Input Capacitance
VEB = -0.5V, IC = 0, f = 1MHz
15
pF
td
Delay Time
VCC = -3V, IC = -10mA
IB1 =- IB2 = -1mA
35
ns
tr
Rise Time
35
ns
ts
Storage Time
225
ns
tf
Fall Time
75
ns
SOT-523F
Marking : A06
B
C
E
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT3906T-T 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3906TT1 功能描述:兩極晶體管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3906TT1G 功能描述:兩極晶體管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3906TT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
MMBT3906T-TP 功能描述:兩極晶體管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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