參數(shù)資料
型號(hào)： MMBT3906T
廠商： LITE-ON SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 244K
代理商： MMBT3906T
MMBT3906T
PNP General Purpose Transistor
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
MECHANICAL DATA
Case: SOT-523 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-200
mA
Collector Power Dissipation
PC
150
mW
Thermal Resistance, Junction to Ambient
RΘJA
833
/W
℃
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=-10A,IE=0
VCBO
-40
V
Collector-emitter breakdown voltage
IC=-1mA,IB=0
VCEO
-40
V
Emitter-base breakdown voltage
IE=-10A,IC=0
VEBO
-5
V
Collector-base cut-off current
VCB=-30V,IE=0
ICBO
-0.1
uA
Emitter-base cut-off current
VEB=-5V,IC=0
IEBO
-0.1
uA
VCE=-1V,IC=-0.1mA
hFE1
60
V
VCE=-1V,IC=-1mA
hFE2
80
V
VCE=-1V,IC=-10mA
hFE3
100
300
V
VCE=-1V,IC=-50mA
hFE4
60
V
DC current gain
VCE=-1V,IC=-100mA
hFE5
30
V
IC=-10mA,IB=-1mA
VCE(sat)1
-0.25
V
Collector-emitter saturation voltage
IC=-50mA,IB=-5mA
VCE(sat)2
-0.4
V
IC=-10mA,IB=-1mA
VBE(sat)1
-0.65
-0.85
V
Base-emitter saturation voltage
IC=-50mA,IB=-5mA
VBE(sat)2
-0.95
V
Transition frequency
VCE=-20V,IC=-10mA,
f=100MHz
fT
250
MHz
Collector output capacitance
VCB=-5V,IE=0,f=1MHz
Cob
4.5
pF
Input capacitance
VEB=-0.5V,IE=0,f=1MHz
Ciob
10
pF
Noise figure
VCE=-5V,IC=-0.1mA
NF
4
dB
Delay time
Td
35
nS
Rise time
VCC=-3V, VBE=-0.5V
IC=-10mA , IB1=-IB2=-1mA
Tr
35
nS
Storage time
Ts
225
nS
Fall time
VCC=-3V, IC=-10mA
IB1=-IB2=-1mA
Tf
75
nS
REV. 1, Oct-2010, KSPR13
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT3906-T 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT3906-T/R 制造商:Micro Commercial Components (MCC) 功能描述:TRANSISTOR PNP SO
MMBT3906T_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT3906T_11 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP General Purpose Transistor
MMBT3906T_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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