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參數(shù)資料
| 型號： | MMBT3906 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 193K |
| 代理商： | MMBT3906 |
MMBT3906
PNP General Purpose Transistor
FEATURES
For switching and amplifier applications.
Complementary NPN Type Available (MMBT3904)
MECHANICAL DATA
Case: SOT-23 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-200
mA
Collector Power Dissipation
PC
200
mW
Thermal Resistance, Junction to Ambient
RΘJA
625
/W
℃
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=-10A,IE=0
VCBO
-40
V
Collector-emitter breakdown voltage
IC=-1mA,IB=0
VCEO
-40
V
Emitter-base breakdown voltage
IE=-10A,IC=0
VEBO
-5
V
Collector-base cut-off current
VCB=-40V,IE=0
ICBO
-0.1
uA
Collector-base cut-off current
VCE=-30V,VBE(off)=-3V
ICEX
-50
nA
Emitter-base cut-off current
VEB=-5V,IC=0
IEBO
-0.1
uA
VCE=-1V,IC=-10mA
hFE1
100
300
V
VCE=-1V,IC=-50mA
hFE2
60
V
DC current gain
VCE=-1V,IC=-100mA
hFE3
30
V
Collector-emitter saturation voltage
IC=-50mA,IB=-5mA
VCE(sat)
-0.4
V
Base-emitter saturation voltage
IC=-50mA,IB=-5mA
VBE(sat)
-0.95
V
Transition frequency
VCE=-20V,IC=-10mA,
f=100MHz
fT
300
MHz
Delay time
Td
35
nS
Rise time
VCC=-3V, VBE=-0.5V
IC=-10mA , IB1=-IB2=-1mA
Tr
35
nS
Storage time
Ts
225
nS
Fall time
VCC=-3V, IC=-10mA
IB1=-IB2=-1mA
Tf
75
nS
REV. 1, Oct-2010, KSPR12
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906 MCC | 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 - free partial T/R at 500. |
| MMBT3906,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SOT-23 |
| MMBT3906/E9 | 制造商:Vishay Semiconductors 功能描述:Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R |
| MMBT3906_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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